文章网页链接：https://doi.org/10.1002/adma.202500534
上一条：Applied Physics Letters--An enhancement-mode C-H diamond FET with low work function gate material gadolinia
下一条：Physical Review B--Ferroelectric MBi2Te4 (M = Ge, Sn, Pb) bilayers with giant Rashba spin splitting and tunable first- or second-order topological states
© 2016 自旋电子材料与量子器件研究中心. All Rights Reserved.地址：陕西省西安市咸宁西路28号（710049）
