姓名：柴正
职称：教授（博士生导师）
E-mail：zheng.chai@xjtu.edu.cn
教育经历
2014/06–2014/12,2015/03–2015/09,2016/04–2016/10 比利时微电子研究中心(IMEC)联合培养博士
2013/12–2017/08 利物浦约翰摩尔斯大学 电子电气工程系 博士
2011/09–2014/03 西安电子科技大学 微电子学院 硕士
2007/09–2011/07 西安电子科技大学 微电子学院 学士
工作经历
2022/10-至今 西安交通大学 材料学院 教授（博士生导师）
2020/12-2022/09 西安交通大学 材料学院 特聘研究员（博士生导师）
2018/02-2019/01 比利时微电子研究中心(IMEC) 访问博士后研究员
2017/10-2020/10 利物浦约翰摩尔斯大学 博士后研究员
科研项目
1.西安交通大学“青年拔尖人才”计划项目
2.青年科学基金项目：随机电报噪声缺陷探测技术对磁性隧道结势垒层击穿微观机制的研究
个人简介
从事自旋电子材料与新型存储器件领域的研究。在VLSI、IEDM、Adv. Mater.、 Nat. Commun.、IEEE TED、IEEE EDL等微纳电子领域国际会议和期刊上发表论文20余篇，以第一/通讯作者发表本领域顶级会议之一Symposium on VLSI Technology (VLSI)论文2篇、权威期刊IEEE Electron Device Letters(IEEE EDL)论文7篇、IEEE Transactions on Electron Devices(IEEE TED)论文2篇。2018-2020年IEEE EDL金牌审稿人。
研究领域
1.自旋电子材料；
2.新型存储器件；
3.器件可靠性分析；
4.类脑计算、存内计算等新兴计算范式。
代表性论文（*为通讯作者）
（1）期刊论文：
1. Zeyu Hu , Weidong Zhang* , Robin Degraeve , Daniele Garbin , Zheng Chai* ,Nishant Saxena, Pedro Freitas , Andrea Fantini, Taras Ravsher ,Sergiu Clima , Jian Fu Zhang , Romain Delhougne, Ludovic Goux, and Gouri Kar.New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Trans. Electron Devices. vol.70, no.2, Feb. 2023
2. Yan Du, Wei Shao, Zheng Chai*, Hanzhang Zhao, Qihui Diao, Yawei Gao, Xihui Yuan, Qiaoqiao Wang, Tao Li,Weidong Zhang, Jian Fu Zhang and Tai Min*.Synaptic 1/f noise injection for overfitting suppression in hardware neural networks. Neuromorph.Comput. Eng. vol. 4, no. 3, Aug. 2022
3. Xue Zhou, Zeyu Hu, Zheng Chai*, Weidong Zhang*, Sergiu Clima, Robin Degraeve, Jian Fu Zhang, Andrea Fantini, Daniele Garbin, Romain Delhougne, Ludovic Goux and Gouri Sankar Kar. Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Lett. vol. 43, no. 7, July 2022
4. Zheng Chai*, Weidong Zhang*, Sergiu Clima, Firas Hatem, Robin Degraeve, Qihui Diao, Jian Fu Zhang, Pedro Freitas, John Marsland, Andrea Fantini, Daniele Garbin, Ludovic Goux and Gouri Sankar Kar, Cycling induced metastable degradation in GeSe Ovonic threshold switching selector, IEEE Electron Device Lett., vol. 42, no. 10, Oct. 2021
5. Zheng Chai*, Pedro Freitas, Weidong Zhang*, Firas Hatem, Robin Degraeve, Sergiu Clima, Jian Fu Zhang, John Marsland, Andrea Fantini, Daniele Garbin, Ludovic Goux, Gouri Sankar Kar, Stochastic computing based on volatile GeSe ovonic threshold switching selectors, IEEE Electron Device Lett., vol. 41, no. 10, Oct. 2020
6. Zheng Chai*, Wei Shao, Weidong Zhang*, James Brown, Robin Degraeve, Flora D. Salim, Sergiu Clima, Firas Hatem, Jian Fu Zhang, Pedro Freitas, John Marsland, Andrea Fantini, Daniele Garbin, Ludovic Goux, and Gouri Sankar Kar, GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator, IEEE Electron Device Lett., vol. 41, no. 2, Feb. 2020
7. Zheng Chai, Weidong Zhang*, Robin Degraeve, Sergiu Clima, Firas Hatem, Jian Fu Zhang, Pedro Freitas, John Marsland, Andrea Fantini, Daniele Garbin, Ludovic Goux, and Gouri Sankar Kar, Dependence of switching probability on operation conditions in GexSe1-x OTS selectors, IEEE Electron Device Lett., vol. 40, no. 8, Aug. 2019
8. Zheng Chai, Pedro Freitas, Weidong Zhang*, Firas Hatem, Jian Fu Zhang, John Marsland, Bogdan Govoreanu, Ludovic Goux and Gouri Sankar Kar, Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network, IEEE Electron Device Lett., vol. 39, no. 11, Sept. 2018
9. Zheng Chai, Weidong Zhang*, Pedro Freitas, Firas Hatem, Jian Fu Zhang, John Marsland, Bogdan Govoreanu, Ludovic Goux, Gouri Sankar Kar, Steve Hall and Paul Chalker, John Robertson, The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN- Based Defect Probing Technique, IEEE Electron Device Lett., vol. 39, no. 7, July 2018
10. Zheng Chai, Jigang Ma*, Wei Dong Zhang*, Bogdan Govoreanu, Jian Fu Zhang, Zhigang Ji, and Malgorzata Jurczak, Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive Switching Device by Random Telegraph Signals, IEEE Trans. Electron Devices, vol. 64, no. 10, Oct. 2017
11. Zheng Chai, Weidong. Zhang, Robin Degraeve, Jian Fu Zhang, John Marsland, Andrea Fantini, Daniele Garbin, Sergiu Clima, Ludovic Goux, and Gouri Sankar Kar, RTN in GexSe1-x OTS Selector Devices, Microelectronic Engineering, Vol. 215, No. 15, July 2019
12. Jigang Ma, Zheng Chai*, Wei Dong Zhang, Jian Fu Zhang, John Marsland, Bogdan Govoreanu, Robin Degraeve, Ludovic Goux, Gouri Sankar Kar, TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device, IEEE Trans. Electron Devices, vol. 66, no. 1, Jan. 2019
13. Jigang Ma, Zheng Chai, Wei Dong Zhang*, Jian Fu Zhang, Zhigang Ji, Brahim Benbakhti, Bogdan Govoreanu, Eddy Simoen, Ludovic Goux, Attilio Belmonte, Robin Degraeve, Gouri Sankar Kar and Malgorzata Jurczak, Investigation of Preexisting and Generated Defects in Non-filamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution, IEEE Trans. Electron Devices, vol. 65, no. 3, Mar. 2018
14. D. Joksas, P. Freitas, Z. Chai, W. H. Ng, M. Buckwell, C. Li, W. D. Zhang, Q. Xia, A. J. Kenyon and A. Mehonic*, Committee machines—a universal method to deal with non-idealities in memristor-based neural networks, Nat. Commun., vol. 11, no. 4273, Aug. 2020
（2）会议论文：
1. Z. Chai, W. Zhang*, R. Degraeve, S. Clima, F. Hatem, J. F. Zhang, P. Freitas, J. Marsland, A. Fantini, D. Garbin, L. Goux, and G. S. Kar, Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors, Digest of Technical Papers – Symposium on VLSI Technology, IEEE 2019 Symposia on VLSI Technology and Circuits
2. Z. Chai, J. Ma, W. Zhang*, B. Govoreanu, E. Simoen, J. F. Zhang, Z. Ji, R. Gao, G. Groeseneken, M. Jurczak, RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism, Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits
3. F. Hatem, Z. Chai, W. Zhang*, A. Fantini, R. Degraeve, S. Clima, D. Garbin, J. Robertson, Y. Guo, J.F. Zhang, J. Marsland, P. Freitas, L. Goux, and G.S. Kar, Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme, IEEE International Electron Device Meeting (IEDM), 2019
4. J. Ma, Z. Chai, W. Zhang*, B. Govoreanu, J. F. Zhang, Z. Ji, B. Benbakhti, G. Groeseneken and M. Jurczak, Identify the critical regions and switching/failure mechanisms in non- filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement, Technical Digest - International Electron Devices Meeting (IEDM) 2016
